Peculiarities of electrical properties of metal-insulator-semiconductor capacitors based on high-k dielectric stack containing HfTiSiO:N and HfTiO:N films

Author

Mikhelashvili, V. ; Thangadurai, P. ; Kaplan, W.D. ; Eisenstein, G.

Author_Institution

Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa

fYear

2009

fDate

18-20 March 2009

Firstpage

193

Lastpage

196

Abstract

This paper describes the influence of electron beam irradiation and constant voltage stress on the electrical characteristics of metal-insulator-semiconductor structures, with double layer high-k dielectric stacks containing HfTiSiO:N and HfTiO:N films. The changes in the electrical properties were caused by charge trapping phenomena which is similar for e-beam irradiation and voltage stress cases. It was shown the advantages of an alternative methodology based on alpha-V representation (alpha= d[ln(J)]d[ln(V)] ) to distinguish different current flow mechanisms in ultra thin insulators in different voltage regimes.

Keywords

MOS capacitors; electron beam effects; hafnium compounds; high-k dielectric thin films; titanium compounds; HfTiO:N; HfTiSiO:N; alpha-V representation; charge trapping; current flow mechanisms; double layer high-k dielectric stacks; electrical properties; electron beam irradiation; films; high-k dielectric stack; metal-insulator-semiconductor capacitors; metal-insulator-semiconductor structures; ultra thin insulators; voltage stress; Capacitance-voltage characteristics; Capacitors; Channel bank filters; Electric variables; Electrons; High-K gate dielectrics; Insulation; Metal-insulator structures; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on

Conference_Location

Aachen

Print_ISBN

978-1-4244-3704-7

Type

conf

DOI

10.1109/ULIS.2009.4897569

Filename

4897569