Effect of Au buffer on the field emission characteristics of chemical vapor deposited diamond films

Author

Lee, J.S. ; Liu, K.S. ; Chuang, F.Y. ; Sun, C.Y. ; Huang, C.M. ; Lin, I.N.

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

1996

fDate

7-12 Jul 1996

Firstpage

235

Lastpage

239

Abstract

Au-precoating on silicon substrate was observed to enhance the field emission characteristics of diamond films deposited by chemical vapor deposition technique. The emission current density increased substantially from 1 μA/cm² to 100 μA/cm², while the turn on voltage decreased moderately from 14 MV/m to 10 MV/m. Raman spectra and electron diffraction in transmission electron microscopy (TEM) revealed that both diamond films deposited on Si or Au-coated Si (Au/Si) were nanosized crystals. The Au species were assumed to diffuse along grain boundaries, resulting in low resistance diamond films. Abundant supply of electrons via conducting grain boundaries was presumably the mechanism that enhanced the field emission of the diamond films grown on Au/Si substrates

Keywords

CVD coatings; Raman spectra; diamond; electron diffraction; electron field emission; gold; grain boundary diffusion; nanostructured materials; transmission electron microscopy; Au-Si; C; Raman spectra; buffer; chemical vapor deposition; current density; diamond film; electron diffraction; field emission; gold precoating; grain boundary diffusion; nanosized crystals; resistance; silicon substrate; transmission electron microscopy; turn on voltage; Chemical vapor deposition; Current density; Diffraction; Electron emission; Gold; Grain boundaries; Semiconductor films; Silicon; Transmission electron microscopy; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601815

Filename

601815