• DocumentCode
    3292758
  • Title

    Analysis of delamination and darkening in high power LED packaging

  • Author

    Zhou, Longzao ; An, Bing ; Wu, Yiping ; Liu, Shunhong

  • Author_Institution
    Wuhan Nat. Lab. for Optoelectron., Wuhan, China
  • fYear
    2009
  • fDate
    6-10 July 2009
  • Firstpage
    656
  • Lastpage
    660
  • Abstract
    Luminous emittance declination due to interfacial delamination and darkening is a fatal defect for the GaN-based high power light-emitting diodes (LEDs) under a long time service. This letter brought forward an accelerated aging test under 350 mA forward current, 25degC, 54% RH, 256 hours to testify and analysis the abnormal dark stain on the die surface of high power blue LEDs. SEM micrographs show that a delaminated layer exhibits between the die and the epoxy glue cap on the aging sample. EDAX results illuminates that the percentage of C and O elements is higher than normal. The thermal overstress on the epoxy along the interface owing to the high junction temperature is the main factor to degrade the epoxy gradually. As a result, a darkening area made up of carbon as well its oxide occurs on the LED die surface and depresses the luminous efficiency.
  • Keywords
    III-V semiconductors; X-ray chemical analysis; ageing; delamination; gallium compounds; life testing; light emitting diodes; scanning electron microscopy; wide band gap semiconductors; GaN; SEM micrographs; abnormal dark stain; accelerated aging test; current 350 mA; darkening; die surface; epoxy glue cap; fatal defect; high power LED packaging; interfacial delamination; light-emitting diodes; luminous efficiency; luminous emittance declination; thermal overstress; Accelerated aging; Delamination; Laboratories; Lead; Lenses; Light emitting diodes; Materials science and technology; Plastic packaging; Testing; Thermal degradation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
  • Conference_Location
    Suzhou, Jiangsu
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4244-3911-9
  • Electronic_ISBN
    1946-1542
  • Type

    conf

  • DOI
    10.1109/IPFA.2009.5232549
  • Filename
    5232549