DocumentCode
3292762
Title
High contrast long-period waveguide gratings on silicon-on-insulator (SOI) substrates
Author
Chuang, Ricky W. ; Guo-Shian Wang ; Mao-Teng Hsu
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fYear
2012
fDate
13-16 Dec. 2012
Firstpage
1
Lastpage
3
Abstract
We report the practicality of fabricating the long-period waveguide gratings (LPWGs) on silicon-on-insulator (SOI) substrates with amorphous silicon (a-Si) layer incorporated as a cladding layer. Specifically, the devices are etched and patterned on SOI wafer via an anisotropic wet etching technique, while the a-Si is deposited using plasma-enhanced chemical vapor deposition (PECVD) system. The experimental results later confirm that the LPWG devices resonate within a wavelength range between 1563 and 1580nm and the LPWG waveguide with a width of 8μm has delivered a dip contrast as high as 30 dB and the FWHM as narrow as 1.76nm, as the input light is polarized as transverse electric (TE) wave. With the transverse magnetic (TM) polarized wave provided as an input, the LPWG waveguide with the width of 10μm yields a dip contrast as high as 14.5 dB and its FWHM measured is as narrow as 1.32nm.
Keywords
diffraction gratings; etching; optical fabrication; optical waveguides; plasma CVD coatings; silicon-on-insulator; amorphous silicon layer; anisotropic wet etching technique; cladding layer; high contrast long-period waveguide gratings; patterning technique; plasma enhanced chemical vapor deposition; silicon-on-insulator substrates; transverse electric wave; transverse magnetic polarized wave; wavelength 1563 nm to 1580 nm; Etching; Resists; Silicon compounds; KOH; anisotropic wet etching; long-period waveguide gratings; silicon-on-insulator (SOI);
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Global Conference (PGC), 2012
Conference_Location
Singapore
Print_ISBN
978-1-4673-2513-4
Type
conf
DOI
10.1109/PGC.2012.6458124
Filename
6458124
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