Title :
Electrical characteristics of atomic layer deposited aluminium oxide and lanthanum-zirconium oxide high-k Dielectric stacks
Author :
Abermann, S. ; Henkel, C. ; Bethge, O. ; Bertagnolli, E.
Author_Institution :
Inst. for Solid State Electron., Vienna Univ. of Technol., Vienna
Abstract :
We present a study on the electrical characteristics of Al2O3 and LaxAlyOz High-k Dielectric stacks on p-type silicon-, and n-type germanium substrates. Atomic layer deposition is used to fabricate ultra-thin oxide layers and laminates in the few-nm range at process temperatures of 250degC. By means of metal gate / high-k oxide / semiconductor capacitors we evaluate these material systems regarding their capacitance-voltage and current-voltage characteristics.
Keywords :
MIS capacitors; aluminium compounds; atomic layer deposition; high-k dielectric thin films; laminates; lanthanum compounds; zirconium compounds; Al2O3; Ge; LaxAlyOz; Si; aluminium oxide high-k dielectric stack; atomic layer deposition; capacitance-voltage characteristic; current-voltage characteristic; laminates; lanthanum-zirconium oxide high-k dielectric stack; metal-high-k oxide-semiconductor gate capacitors; n-type germanium substrate; p-type silicon substrate; temperature 250 degC; ultrathin oxide layers; Aluminum oxide; Atomic layer deposition; Capacitors; Dielectric substrates; Electric variables; Germanium; High K dielectric materials; High-K gate dielectrics; Laminates; Temperature distribution; MOS capacitors; aluminum oxid; electrial characteristics; germanium; lanthanum oxide; silicon; zirconium oxide;
Conference_Titel :
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
Conference_Location :
Aachen
Print_ISBN :
978-1-4244-3704-7
DOI :
10.1109/ULIS.2009.4897573
