DocumentCode :
329282
Title :
Hydrogen-Sensitive Breakdown Voltage In The I-V Characteristics Of Tin Dioxide-based Semiconductors
Author :
Egashira, Makoto ; Shimizu, Yasuhiro ; Takao, Yuji ; Fukuyama, Youichi
Author_Institution :
Nagasaki University
Volume :
1
fYear :
1995
fDate :
25-29 Jun 1995
Firstpage :
718
Lastpage :
721
Keywords :
Additives; Conductivity; Electric variables measurement; Extraterrestrial measurements; Fabrication; Gold; Powders; Temperature sensors; Tin; Varistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors and Actuators, 1995 and Eurosensors IX.. Transducers '95. The 8th International Conference on
Print_ISBN :
91-630-3473-5
Type :
conf
DOI :
10.1109/SENSOR.1995.717332
Filename :
717332
Link To Document :
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