Field emission of nitrogen doped DLC films deposited by PECVD

Author

Park, Kyu Chang ; Moon, Jong Hyun ; Kim, Jae Gak ; Chung, Suk Jae ; Oh, Myung Hwan ; Jang, Jin

Author_Institution

Dept. of Phys., Kyung Hee Univ., Seoul, South Korea

fYear

1996

fDate

7-12 Jul 1996

Firstpage

263

Lastpage

267

Abstract

The N doping effect on the electrical conductivity and electron emission property for diamond like carbon (DLC) films deposited by PECVD has been studied. The electrical conductivity can be widely varied by n-type doping of the DLC. The relationship between the prefactor of conductivity and the conductivity activation energy satisfy the Meyer-Neldel relation: σ₀=σ₀₀exp(AE _a) with A=19 eV^-1 and σ₀₀=9×10^-8 S/cm. The emission currents for heavily N doped DLC films are much higher than undoped DLC even though lightly N doped films show much smaller currents

Keywords

carbon; electrical conductivity; electron field emission; elemental semiconductors; nitrogen; plasma CVD coatings; semiconductor doping; semiconductor thin films; vacuum microelectronics; C:N; Meyer-Neldel relation; N doped DLC films; N doping effect; PECVD; conductivity activation energy; conductivity prefactor; diamond like carbon films; electrical conductivity; electron emission property; field emission; n-type doping; Area measurement; Carbon dioxide; Chemical vapor deposition; Conductive films; Diamond-like carbon; Doping; Electron emission; Nitrogen; Temperature dependence; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601821

Filename

601821