Title :
Reliability challenges for advanced copper interconnects: Electromigration and time-dependent dielectric breakdown (TDDB)
Author :
Gambino, Jeffrey P. ; Lee, Tom C. ; Chen, Fen ; Sullivan, Timothy D.
Author_Institution :
IBM Microelectron., Essex Junction, VT, USA
Abstract :
Ensuring the reliability of Cu interconnects becomes more challenging as device dimensions shrink, because of the smaller dimensions and because of the weaker mechanical properties of the low-k material. In this report, we will focus on electromigration and time dependent dielectric breakdown (TDDB) in Cu interconnect structures.
Keywords :
copper; electric breakdown; electromigration; integrated circuit interconnections; integrated circuit reliability; Cu; advanced copper interconnects; electromigration; low-k material; microelectronics reliability; time-dependent dielectric breakdown; Atomic layer deposition; Copper; Dielectric breakdown; Electromigration; Integrated circuit interconnections; Kinetic theory; Materials reliability; Stress; Testing; Wire;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232553
