DocumentCode :
3292855
Title :
Using charge self-compensation domino full-adder with multiple supply and dual threshold voltage in 45nm technology
Author :
Wang, Jinhui ; Wu, Wuchen ; Hou, Ligang ; Geng, Shuqin ; Zhang, Wang ; Peng, Xiaohong ; Gong, Na
Author_Institution :
VLSI & Syst. Lab., Beijing Univ. of Technol., Beijing
fYear :
2009
fDate :
18-20 March 2009
Firstpage :
225
Lastpage :
228
Abstract :
A charge self-compensation technique, based on P-type logic dynamic node charging to N-type logic dynamic node, is proposed in this paper. A novel Zipper CMOS domino full-adder is implemented using this technique, dual threshold voltage technique, and multiple supply technique for power reduction. A power distribution simulation running indicates that the active power of the implemented full-adder can be reduced by up to 37%, 5% and 7%, and its leakage power can be reduced by up to 41%, 20% and 43% as compared to the standard, the dual threshold voltage, and the multiple supply Zipper CMOS domino full-adder with similar delay time, respectively. At last, the influence of the combination idle state determined by inputs and clock signals on the leakage current is analyzed and the optimal idle state is obtained.
Keywords :
CMOS integrated circuits; adders; leakage currents; logic gates; nanoelectronics; N-type logic dynamic node; P-type logic dynamic node charging; Zipper CMOS domino full-adder; charge self-compensation domino full-adder; dual threshold voltage technique; leakage current; leakage power; multiple supply technique; power distribution simulation; size 45 nm; CMOS logic circuits; CMOS technology; Clocks; Degradation; Delay; Energy consumption; Leakage current; Microprocessors; Portable computers; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
Conference_Location :
Aachen
Print_ISBN :
978-1-4244-3704-7
Type :
conf
DOI :
10.1109/ULIS.2009.4897577
Filename :
4897577
Link To Document :
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