Title :
High-κ Ta2O5 film for resistive switching memory application
Author :
Tsai, Y.-R. ; Liao, K.-C. ; Maikap, S.
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan
Abstract :
We report a novel nonvolatile resistive switching memory with a Cu/Ta2O5/TiN structure. This memory device has low power (100 muA/1.5 V), large threshold voltage of 0.8 V, moderate endurance of 102 cycles, and excellent retention with high resistance ratio of 2.4times102 after 105 s (26 hours). Furthermore, the threshold voltage can be increased by both the thickness of Ta2O5 solid electrolyte and annealing temperatures, which can make easier to design the memory circuit.
Keywords :
annealing; copper; digital storage; high-k dielectric thin films; solid electrolytes; tantalum compounds; titanium compounds; Cu-Ta2O5-TiN; annealing; current 100 muA; high-kappa Ta2O5 film; resistance ratio; resistive switching memory; solid electrolyte; time 26 hour; voltage 0.8 V; voltage 1.5 V; Annealing; CMOS technology; Electrodes; High K dielectric materials; High-K gate dielectrics; Nanoscale devices; Nonvolatile memory; Solids; Threshold voltage; Tin;
Conference_Titel :
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
Conference_Location :
Aachen
Print_ISBN :
978-1-4244-3704-7
DOI :
10.1109/ULIS.2009.4897578
