• DocumentCode
    3292869
  • Title

    High-κ Ta2O5 film for resistive switching memory application

  • Author

    Tsai, Y.-R. ; Liao, K.-C. ; Maikap, S.

  • Author_Institution
    Dept. of Electron. Eng., Chang Gung Univ., Taoyuan
  • fYear
    2009
  • fDate
    18-20 March 2009
  • Firstpage
    229
  • Lastpage
    232
  • Abstract
    We report a novel nonvolatile resistive switching memory with a Cu/Ta2O5/TiN structure. This memory device has low power (100 muA/1.5 V), large threshold voltage of 0.8 V, moderate endurance of 102 cycles, and excellent retention with high resistance ratio of 2.4times102 after 105 s (26 hours). Furthermore, the threshold voltage can be increased by both the thickness of Ta2O5 solid electrolyte and annealing temperatures, which can make easier to design the memory circuit.
  • Keywords
    annealing; copper; digital storage; high-k dielectric thin films; solid electrolytes; tantalum compounds; titanium compounds; Cu-Ta2O5-TiN; annealing; current 100 muA; high-kappa Ta2O5 film; resistance ratio; resistive switching memory; solid electrolyte; time 26 hour; voltage 0.8 V; voltage 1.5 V; Annealing; CMOS technology; Electrodes; High K dielectric materials; High-K gate dielectrics; Nanoscale devices; Nonvolatile memory; Solids; Threshold voltage; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
  • Conference_Location
    Aachen
  • Print_ISBN
    978-1-4244-3704-7
  • Type

    conf

  • DOI
    10.1109/ULIS.2009.4897578
  • Filename
    4897578
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3292869