DocumentCode
3292886
Title
Emission characterization of diamond coated Si FEAs
Author
Zhirnov, V.V. ; Givargizov, E.I. ; Kandidov, A.V. ; Seleznev, B.V. ; Alimova, A.N.
Author_Institution
Inst. of Crystallogr., Acad. of Sci., Moscow, Russia
fYear
1996
fDate
7-12 Jul 1996
Firstpage
278
Lastpage
282
Abstract
Large-area arrays of Si tips (103-106 tips in an array) with diamond coating were tested in pulse and DC modes. The arrays demonstrated uniform emission, reproducible I-V plots and low emission threshold. The maximum current achieved with diamond coated Si arrays was 80 mA in pulse mode. Emission characteristics were found to be superior to the uncoated Si tip arrays or diamond-coated flat cathodes
Keywords
diamond; electron field emission; elemental semiconductors; silicon; vacuum microelectronics; 80 mA; C-Si; DC mode; Si tips; diamond coated Si FEA; emission characterization; field emitter arrays; large-area arrays; low emission threshold; pulse mode; uniform emission characteristics; Cathodes; Coatings; Diodes; Field emitter arrays; Microelectronics; Phosphors; Pulse measurements; Silicon; Substrates; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location
St. Petersburg
Print_ISBN
0-7803-3594-5
Type
conf
DOI
10.1109/IVMC.1996.601824
Filename
601824
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