• DocumentCode
    3292886
  • Title

    Emission characterization of diamond coated Si FEAs

  • Author

    Zhirnov, V.V. ; Givargizov, E.I. ; Kandidov, A.V. ; Seleznev, B.V. ; Alimova, A.N.

  • Author_Institution
    Inst. of Crystallogr., Acad. of Sci., Moscow, Russia
  • fYear
    1996
  • fDate
    7-12 Jul 1996
  • Firstpage
    278
  • Lastpage
    282
  • Abstract
    Large-area arrays of Si tips (103-106 tips in an array) with diamond coating were tested in pulse and DC modes. The arrays demonstrated uniform emission, reproducible I-V plots and low emission threshold. The maximum current achieved with diamond coated Si arrays was 80 mA in pulse mode. Emission characteristics were found to be superior to the uncoated Si tip arrays or diamond-coated flat cathodes
  • Keywords
    diamond; electron field emission; elemental semiconductors; silicon; vacuum microelectronics; 80 mA; C-Si; DC mode; Si tips; diamond coated Si FEA; emission characterization; field emitter arrays; large-area arrays; low emission threshold; pulse mode; uniform emission characteristics; Cathodes; Coatings; Diodes; Field emitter arrays; Microelectronics; Phosphors; Pulse measurements; Silicon; Substrates; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
  • Conference_Location
    St. Petersburg
  • Print_ISBN
    0-7803-3594-5
  • Type

    conf

  • DOI
    10.1109/IVMC.1996.601824
  • Filename
    601824