Field emission properties of ta-C films with nitrogen doping

Author

Park, Kyu Chang ; Moon, Jong Hyun ; Chung, Suk Jae ; Jung, Jae Hoon ; Ju, Byeong Kwon ; Oh, Myung Hwan ; Milne, W.I. ; Han, Min Koo ; Jang, Jin

Author_Institution

Dept. of Phys., Kyung Hee Univ., Seoul, South Korea

fYear

1996

fDate

7-12 Jul 1996

Firstpage

298

Lastpage

302

Abstract

We have studied the electron emission characteristics of tetrahedral amorphous carbon (ta-C) films with different nitrogen content. With increasing N content in ta-C, the room temperature conductivity as well as the emission current decreases and then increases, resulting in minima. The Fermi-level shifts toward the conduction band and thus the work function decreases by N doping in ta-C, however the emission currents of doped ta-C films are less than those of undoped ta-C

Keywords

Fermi level; amorphous state; carbon; doping profiles; electrical conductivity; electron field emission; nitrogen; thin films; vacuum microelectronics; work function; C:N; Fermi-level shift; N doping; electron emission characteristics; field emission properties; room temperature conductivity; tetrahedral amorphous C films; work function; Acceleration; Amorphous materials; Carbon dioxide; Cathode ray tubes; Doping; Electron emission; Flat panel displays; Nitrogen; Organic materials; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601828

Filename

601828