Title :
Future Lithography Challenges
Author_Institution :
Precision Equip. Co., Nikon Corp., Tokyo
Abstract :
For the past 25 years, the resolution and productivity of lithography exposure tools have continuously improved. The latest exposure tools have adopted immersion technology with ArF excimer lasers for the production of half pitch (HP) 55 nm to 45 nm patterns and beyond. For HP 32 nm, EUVL is the main candidate. The author reports the status of development of EUV tools and future lithography challenges.
Keywords :
excimer lasers; immersion lithography; laser beam applications; nanolithography; nanopatterning; ultraviolet lithography; ArF excimer lasers; EUV lithography; half pitch; immersion technology; lithography exposure tools; Biographies; Biomedical optical imaging; Lenses; Lithography; Optical design; Optical interferometry; Production; Productivity; Throughput; Ultraviolet sources;
Conference_Titel :
Semiconductor Manufacturing, 2006. ISSM 2006. IEEE International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
978-4-9904138-0-4
DOI :
10.1109/ISSM.2006.4493004
