Title :
Fabrication of FED prototype based on Si FEAs with diamond coating
Author :
Givargizov, E.I. ; Zhirnov, V.V. ; Chubun, N.N. ; Stepanova, A.N.
Author_Institution :
Inst. of Crystallogr., Acad. of Sci., Moscow, Russia
Abstract :
A new concept of field emission display (FED) based on ungated silicon field emission arrays with diamond coating is proposed. FED prototypes have been fabricated and tested in DC and pulse modes. Sufficiently bright light emission was observed at the anode-to-cathode voltage from 200 to 300 Volts
Keywords :
diamond; electron field emission; elemental semiconductors; flat panel displays; silicon; vacuum microelectronics; 200 to 300 V; C-Si; DC mode; FED prototype; Si FEAs; diamond coating; fabrication; field emission display; pulse mode; ungated Si field emission arrays; Anodes; Cathodes; Coatings; Diodes; Fabrication; P-n junctions; Phosphors; Prototypes; Silicon; Voltage;
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
DOI :
10.1109/IVMC.1996.601829
