Title :
Modeling of Metal-Semiconductor Field-Effect-Transistor on H- terminated polycrystalline diamond
Author :
Pasciuto, B. ; Ciccognani, W. ; Limiti, E. ; Calvani, P. ; Rossi, M.C. ; Conte, G.
Author_Institution :
Electron. Eng. Dept., Univ. of Rome "Tor Vergata", Rome
Abstract :
On the bases of the RF characteristics and measured small-signal parameters, an equivalent circuit model is formulated and characterized for Metal-Semiconductor Field Effect Transistors based on H-terminated polycrystalline diamond. Starting from on-wafer measurements, a bias dependent transistor behavior representation has been fully determinated. Such a equivalent circuit model is a first important step in order to realize an RF IC based on diamond.
Keywords :
diamond; elemental semiconductors; field effect transistors; semiconductor-metal boundaries; C; equivalent circuit model; h- terminated polycrystalline diamond; metal-semiconductor field-effect-transistor; on-wafer measurements; Electrodes; Electron beams; Equivalent circuits; Frequency measurement; Gain; Lithography; MESFETs; Radio frequency; Radiofrequency integrated circuits; Scattering parameters; carbon based electronic; dc and rf performance; device modeling; device technology; electrical characteristics; semiconductor devices; small-signal equivalent circuit; wide band semiconductors;
Conference_Titel :
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
Conference_Location :
Aachen
Print_ISBN :
978-1-4244-3704-7
DOI :
10.1109/ULIS.2009.4897586
