DocumentCode
32930
Title
Low-Power CMOS Smart Temperature Sensor With a Batch-Calibrated Inaccuracy of 
From  incremental ΔΣ A/D converter. After batch calibration, an inaccuracy of ±0.25°C (±3) from -70°C to 130°C is obtained. This represents a two-fold improvement compared to the state-of-the-art. After individual calibration at room temperature, an inaccuracy better than ±0.1°C over the military temperature range is obtained, which is in-line with the state-of-the-art. This performance is achieved at a power consumption of 65 μW during a measurement time of 100 ms, by optimizing the power/inaccuracy tradeoffs, and by employing a clock frequency proportional to absolute temperature. The latter ensures accurate settling of the SC input stage at low temperatures, and reduces the effects of leakage currents at high temperatures.</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>CMOS integrated circuits; calibration; intelligent sensors; low-power electronics; temperature sensors; batch calibration; batch-calibrated inaccuracy; leakage currents; low-power CMOS smart temperature sensor; precision switched-capacitor incremental ΔΣ A/D converter; substrate PNP transistors; temperature -70 degC to 130 degC; temperature 293 K to 298 K; temperature information; Calibration; Capacitors; Modulation; Temperature measurement; Temperature sensors; Transistors; <formula formulatype=)
$DeltaSigma$ A/D conversion; batch calibration; smart temperature sensors; substrate PNP transistors;
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2013.2244033
Filename
6423195
Link To Document