Fabrication of patterned diamond field emitter tips using silicon oxide barrier

Author

Hunsuk Cha ; Chung, Bokeon ; Ko, Taeyoung ; Jeon, D. ; Lee, Myung Sung ; Baik, Young-Joon

Author_Institution

Dept. of Phys., Myong Ji Univ., Seoul, South Korea

fYear

1996

fDate

7-12 Jul 1996

Firstpage

313

Lastpage

315

Abstract

There is a great effort to achieve electron emission from chemical vapor deposited (CVD) polycrystalline diamond film. This is because diamond possesses high chemical stability, extraordinary hardness, high thermal conductivity, high melting temperature, and low electron affinity. In this work we present a method for fabricating a patterned diamond tip array. Selective deposition of CVD diamond film is an important technique in the fabrication of diamond electronic devices. We have used silicon oxide to block the lateral growth of diamond to selectively grow a diamond field emitter array

Keywords

diamond; electron field emission; plasma CVD; plasma CVD coatings; sputter etching; vacuum microelectronics; C; C-Si; CVD polycrystalline diamond film; FEA fabrication; SiO₂; SiO₂ barrier; chemical stability; chemical vapor deposited film; electron emission; field emitter array; hardness; high melting temperature; low electron affinity; patterned diamond field emitter tips; thermal conductivity; Argon; Chemical vapor deposition; Etching; Fabrication; Hydrogen; Plasma applications; Scanning electron microscopy; Semiconductor films; Silicon; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601831

Filename

601831