Title :
Design considerations for undoped FinFETs based on a 3D compact model for the potential barrier
Author :
Kloes, Alexander ; Weidemann, Michaela ; Schwarz, Mike ; Holtij, Thomas
Author_Institution :
Univ. of Appl. Sci., Giessen
Abstract :
From an analytical model for the potential barrier in undoped FinFETs geometry constraints for the DIBL effect are derived. Furthermore, the influence of corner effects on the transconductance of the drain current are investigated. These effects are analyzed by numerical results and by definition of a simple current equation which is based on the analytical model.
Keywords :
MOSFET; 3D compact model; DIBL effect; corner effects; current equation; drain current; potential barrier; transconductance; undoped FinFETs; Analytical models; Electrostatic analysis; Equations; FETs; FinFETs; Geometry; Leakage current; Solid modeling; Threshold voltage; Transconductance;
Conference_Titel :
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
Conference_Location :
Aachen
Print_ISBN :
978-1-4244-3704-7
DOI :
10.1109/ULIS.2009.4897587
