Title :
Voltage Contrast Enhancement for Gate Leak Failure Detected by Electron Beam Inspection
Author :
Fujiyoshi, Katsuhiro ; Sawai, Koetsu ; Inoue, Kazutaka ; Saiki, Keiichi ; Sakurai, Koichi
Author_Institution :
Renesas Technol. Corp., Hitachinaka
Abstract :
We studied the VC (voltage contrast) enhancement technique of the FA (failure analysis) tool. We found a gate leak VC dependency on the relative angle between the beam scan direction and gate electrode direction. A simplified RC model can explain this phenomenon qualitatively. With the help of this VC enhancement technique of the FA tool, we could tune the EBI recipe in appropriate sensitivity. As a result, correct EBI evaluation results of countermeasure experiments led us to a solution within a shorter period of time.
Keywords :
electron beams; fault diagnosis; inspection; beam scan direction; electron beam inspection; failure analysis; gate electrode direction; gate leak failure detection; voltage contrast enhancement; Electric breakdown; Electrodes; Electron beams; Epitaxial growth; Failure analysis; Inspection; Leak detection; Random access memory; Virtual colonoscopy; Voltage;
Conference_Titel :
Semiconductor Manufacturing, 2006. ISSM 2006. IEEE International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
978-4-9904138-0-4
DOI :
10.1109/ISSM.2006.4493009
