DocumentCode
3293047
Title
Source of carbon atoms containing no carbon clusters
Author
Gall, N.R. ; Kov, E. V Rut ; Tontegode, A.Ya. ; Kuznetsov, P.B. ; Gall, R.N.
Author_Institution
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fYear
1996
fDate
7-12 Jul 1996
Firstpage
316
Lastpage
319
Abstract
A source of carbon atoms free from carbon clusters and noncarbon admixtures was developed, designed, produced and tested by us for the first time. A very high efficiency of its application to SiC growth at low temperatures was shown. Atomic carbon seems to be very promising for epitaxial growth of diamond film
Keywords
carbon; epitaxial growth; sputtering; C; C atoms; SiC; SiC growth; diamond film; epitaxial growth; low temperature; Atomic beams; Atomic layer deposition; Chemical technology; Control systems; Gettering; Molecular beam epitaxial growth; Semiconductor films; Silicon carbide; Testing; Vacuum systems;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location
St. Petersburg
Print_ISBN
0-7803-3594-5
Type
conf
DOI
10.1109/IVMC.1996.601832
Filename
601832
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