Title :
Source of carbon atoms containing no carbon clusters
Author :
Gall, N.R. ; Kov, E. V Rut ; Tontegode, A.Ya. ; Kuznetsov, P.B. ; Gall, R.N.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
A source of carbon atoms free from carbon clusters and noncarbon admixtures was developed, designed, produced and tested by us for the first time. A very high efficiency of its application to SiC growth at low temperatures was shown. Atomic carbon seems to be very promising for epitaxial growth of diamond film
Keywords :
carbon; epitaxial growth; sputtering; C; C atoms; SiC; SiC growth; diamond film; epitaxial growth; low temperature; Atomic beams; Atomic layer deposition; Chemical technology; Control systems; Gettering; Molecular beam epitaxial growth; Semiconductor films; Silicon carbide; Testing; Vacuum systems;
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
DOI :
10.1109/IVMC.1996.601832
