Title :
Compact modeling of quantization effects for cylindrical gate-all-around MOSFETs
Author :
Cousin, Bastien ; Rozeau, Olivier ; Jaud, Marie-Anne ; Jomaah, Jalal
Abstract :
For the first time, a continuous analytical model of quantum-mechanical effects for cylindrical undoped Si-nanowire MOSFETs is presented in this paper. By using a variational approach, this model is suitable for both structural and electrical confinement of carriers in the nanowire. This whole explicit model is developed in order to be integrated into a surface-potential-based model. The analytical model shows excellent agreement with numerical simulations and results concerning current-voltage (I-V) characteristics demonstrate the application of our compact model to circuit simulation.
Keywords :
MOSFET; nanowires; semiconductor device models; semiconductor quantum wires; silicon; surface potential; variational techniques; MOSFET; Si; Si-nanowire; current-voltage characteristics; quantization effects; quantum-mechanical effects; surface-potential-based model; variational approach; Analytical models; CMOS technology; Electrons; Electrostatics; MOSFETs; Numerical simulation; Quantization; Silicon; Virtual colonoscopy; Voltage; Cylindrical nanowire gate-all-around (GAA) MOSFET; compact modeling; quantum-mechanical effects (QME);
Conference_Titel :
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
Conference_Location :
Aachen
Print_ISBN :
978-1-4244-3704-7
DOI :
10.1109/ULIS.2009.4897588