A wide locking range Q-band injection-locked frequency divider

Author

Wen-Feng Liang ; Wei Hong ; Ji-Xin Chen

Author_Institution

Sch. of Inf. Sci. & Eng., Southeast Univ., Nanjing, China

fYear

2013

fDate

14-18 April 2013

Firstpage

1

Lastpage

3

Abstract

A Q-band divide-by-2 injection-locked frequency divider (ILFD) is presented in this paper. A common-centroid cross-coupled transistor pair structure is adopted to reduce the gate-drain capacitance for widening the locking range. The whole layout of the ILFD is simulated using a 3D electromagnetic (EM) simulator for a one-pass success, and a good match between the simulation and measurement results is achieved without using any tuning varactors. At an input power of 0 dBm, the ILFD achieves the input locking range of 34-50 GHz. The power consumption of the ILFD core is 7.7 mW at a 0.7 V supply voltage.

Keywords

CMOS integrated circuits; capacitance; energy consumption; field effect MMIC; frequency dividers; varactors; 3D electromagnetic simulator; EM simulator; ILFD; common-centroid cross-coupled transistor pair structure; frequency 34 GHz to 50 GHz; gate-drain capacitance; injection-locked frequency divider; power 7.7 mW; power consumption; tuning varactor; wide locking range Q-band; CMOS integrated circuits; CMOS technology; Capacitance; Frequency conversion; Layout; Oscillators; Transistors; CMOS; Q-band; frequency divider; injection-locked;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Symposium (IWS), 2013 IEEE International

Conference_Location

Beijing

Type

conf

DOI

10.1109/IEEE-IWS.2013.6616809

Filename

6616809