Collector depletion region investigation of SOI SiGe HBTs

Author

Xu, Xiaobo ; Xu, Kaixuan ; Zhang, Heming ; Ning, Jing ; Lu, Yaoyao

Author_Institution

Key Lab. of Minist. of Educ. for Wide Band Gap Semicond. Mater. & Devices, Xidian Univ., Xi´´an, China

fYear

2011

fDate

15-17 April 2011

Firstpage

2039

Lastpage

2043

Abstract

A growing interest is focused on HBT integrating with SOI CMOS in smaller scale. So IBM proposes a vertical structure of SiGe HBT. This paper proposes and analyses the space charge region, the field and depletion width model of the folded collector. The results indicate, the space charge region consists of intrinsic junction depletion and MOS capacitance depletion, the width of the space charge region increases with larger doping concentration of the collector, larger reverse junction voltage, and smaller substrate voltage, the region features a vertical expansion followed by a lateral expansion. This paper provides valuable reference to the SiGe nun-wave BiCMOS circuit design and simulation on thin film SOI.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; field effect MIMIC; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor materials; semiconductor thin films; silicon-on-insulator; space charge; MOS capacitance depletion; SOI CMOS IBM process; SOI HBT; SiGe; collector depletion region; collector doping concentration; lateral expansion; mm-wave BiCMOS circuit design; reverse junction voltage; space charge region analysis; substrate voltage; thin film SOI simulation; Decision support systems; Mercury (metals); BiCMOS; SOI; SiGe HBT; collector; space charge region model;

fLanguage

English

Publisher

ieee

Conference_Titel

Electric Information and Control Engineering (ICEICE), 2011 International Conference on

Conference_Location

Wuhan

Print_ISBN

978-1-4244-8036-4

Type

conf

DOI

10.1109/ICEICE.2011.5778307

Filename

5778307