Valley splitting in thin silicon films from a two-band k·p model

Author

Sverdlov, V. ; Windbacher, T. ; Baumgartner, O. ; Schanovsky, F. ; Selberherr, S.

Author_Institution

Inst. for Microelectron., Tech. Univ. Wien, Vienna

fYear

2009

fDate

18-20 March 2009

Firstpage

277

Lastpage

280

Abstract

The unprimed valley structure in (001) silicon thin films has been analyzed within the two-band kmiddotp model. It is shown that the two-fold degeneracy of the unprimed subbands can be lifted leading to the so-called valley splitting which is proportional to the strength of the perpendicular magnetic field. The valley splitting can be enhanced in <110> oriented point contacts, while it is suppressed in a <100> point contact. Finally, the valley splitting can be controlled and made larger than the Zeeman splitting by shear strain. This makes silicon very attractive for spintronic applications.

Keywords

Zeeman effect; elemental semiconductors; magnetoelectronics; perpendicular magnetic recording; point contacts; semiconductor thin films; silicon; Si; Zeeman splitting; perpendicular magnetic field; point contacts; shear strain; silicon thin films; spintronic applications; two-band kmiddotp model; unprimed valley structure; valley splitting; Capacitive sensors; Dielectric materials; Electrons; High K dielectric materials; High-K gate dielectrics; Integrated circuit technology; MOSFETs; Microelectronics; Semiconductor films; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on

Conference_Location

Aachen

Print_ISBN

978-1-4244-3704-7

Type

conf

DOI

10.1109/ULIS.2009.4897590

Filename

4897590