Title :
Investigation of the vertical IMOS-transistor by device simulation
Author :
Kraus, Rainer ; Jungemann, Christoph
Author_Institution :
EIT4, Bundeswehr Univ., Neubiberg
Abstract :
The characteristics of vertical IMOS transistors are investigated with the help of 2D device simulations. The obtained results show the influence of different device parameters like doping concentration, charge carrier lifetime, and size of the floating body. Furthermore the static and dynamic switching behaviour is presented.
Keywords :
MOSFET; carrier lifetime; semiconductor device models; semiconductor doping; 2D device simulation; charge carrier lifetime; doping concentration; dynamic switching behaviour; floating body size; static switching behaviour; vertical IMOS-transistor; Charge carrier lifetime; Circuit simulation; Doping; Dynamic voltage scaling; Electrons; Impact ionization; Leakage current; MOSFETs; Threshold voltage; Tunneling;
Conference_Titel :
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
Conference_Location :
Aachen
Print_ISBN :
978-1-4244-3704-7
DOI :
10.1109/ULIS.2009.4897591
