Title :
Electron emission characteristics of pulsed laser deposited diamond-like films
Author :
Chuang, F.Y. ; Sun, C.Y. ; Cheng, H.F. ; Wang, W.C. ; Huang, C.M. ; Lin, I.N.
Author_Institution :
Dept. of Electron. Eng., Nat. Taiwan Inst. of Technol., Taipei, Taiwan
Abstract :
Diamond like carbon (DLC) films possessing large electron emission capacity were obtained by pulsed laser deposition process. AFM morphologies and Raman spectra inferred that the proportion of SP3 -bonds is the predominating factor modifying the field emission characteristics. Large laser fluence and moderately high substrate temperature are thus required. The critical laser fluence needed to deposit DLC films with large emission current density was 10 J/cm2 for 248 nn (KrF) laser beams and 4 J/cm2 for 193 nn (ArF) laser beams, respectively. The highest emission current density was 80 μLA/cm2 for DLC films deposited at 400°C using 248 nn laser beams and was 160 μA/cm2 for those grown at 200°C using 193 nm laser beams. The turn on electric field was, respectively, 11.6 MV/m and 11.4 MV/m
Keywords :
Raman spectra; atomic force microscopy; carbon; current density; electron field emission; pulsed laser deposition; thin films; vacuum microelectronics; 193 nm; 200 C; 248 nm; 400 C; AFM morphologies; ArF; ArF laser beam; C; DLC films; KrF; KrF laser beam; Raman spectra; SP3-bonds; diamond-like C films; electron emission characteristics; emission current density; high substrate temperature; large laser fluence; pulsed laser deposited films; pulsed laser deposition process; Carbon dioxide; Current density; Diamond-like carbon; Electron emission; Laser beams; Laser modes; Morphology; Optical pulses; Pulsed laser deposition; Temperature;
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
DOI :
10.1109/IVMC.1996.601836
