Title :
Permittivity enhancement and dielectric relaxation of doped hafnium and zirconium oxide
Author :
Werner, M. ; Zhao, C.Z. ; Taylor, S. ; Chalker, P.R. ; Black, K. ; Gaskell, J.
Author_Institution :
Dept. of Eng., Univ. of Liverpool, Liverpool, UK
Abstract :
The frequency dispersion of La doped zirconia and cerium doped hafnia films is considered. Doping at concentration of approximately 10% stabilizes crystalline phases with higher-k values. The dielectric relaxation of La doped zirconia films is more severe than the cerium doped hafnia.
Keywords :
cerium compounds; dielectric relaxation; doping; hafnium compounds; lanthanum compounds; permittivity; thin films; zirconium compounds; CeHfO2; LaZrO2; crystalline phase; dielectric relaxation; doping; frequency dispersion; permittivity enhancement; Annealing; Atomic force microscopy; Capacitance-voltage characteristics; Cerium; Dielectrics; Doping; Frequency measurement; Hafnium; Permittivity; Zirconium;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232568
