Title :
Hot electron reliability and ESD latent damage
Author :
Aur, S. ; Chatterjee, Avhishek ; Polgreen, T.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
The authors present a study of the impact of noncatastrophic electrostatic-discharge (ESD) stress on hot-electron reliability as well as the effect of hot electron (HE) injection on ESD protection threshold. It is found that there is a factor of two to four deterioration in hot-electron reliability after low-level ESD stress. These two effects can be viewed as similar in that HE is a low-current long-time process and ESD is a high-current short-time process. Therefore the techniques for characterizing hot-electron degradation have been applied to quantify damage due to ESD stress. This technique shows electrical evidence of current filaments during an ESD
Keywords :
discharges (electric); electrostatics; hot carriers; insulated gate field effect transistors; reliability; semiconductor device testing; ESD latent damage; ESD protection threshold; NMOS transistors; current filaments; electrostatic discharge stress; hot-electron degradation; hot-electron reliability; Charge pumps; Current measurement; Degradation; Electric breakdown; Electrons; Electrostatic discharge; Helium; MOSFET circuits; Protection; Pulse measurements; Space vector pulse width modulation; Stress;
Conference_Titel :
Reliability Physics Symposium 1988. 26th Annual Proceedings., International
Conference_Location :
Monterey, CA
DOI :
10.1109/RELPHY.1988.23418