Title :
Using low-k oxide for reduction of leakage current in Double Gate Tunnel FET
Author :
Vadizadeh, Mahdi ; Fathipour, Morteza
Author_Institution :
Dept of Electr. & Comput. Eng., Univ. of Tehran, Tehran
Abstract :
In order to enhance Ion/Ioff ratio in the double gate tunneling field effect transistor (DG-TFET), employing a double gate structure has been investigated. Furthermore by employing a low-k oxide for the gate near the drain side (Gate2) fringing field effects are suppressed. Hence, the leakage current is decreased. Also a work function engineering method has been employed for the gate near the source (Gate1) to further reduce the off state current.
Keywords :
field effect transistors; leakage currents; tunnel transistors; work function; DG-TFET; double gate structure; double gate tunnel FET; drain side fringing field effects; field effect transistor; leakage current reduction; low-k oxide transistor; work function engineering method; CMOS technology; Double-gate FETs; Electrons; High K dielectric materials; High-K gate dielectrics; Leakage current; MOSFET circuits; P-i-n diodes; Tunneling; Voltage; band to band tunneling; high-k oxide; low-k oxide; work function engineering;
Conference_Titel :
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
Conference_Location :
Aachen
Print_ISBN :
978-1-4244-3704-7
DOI :
10.1109/ULIS.2009.4897595
