• DocumentCode
    3293195
  • Title

    Using low-k oxide for reduction of leakage current in Double Gate Tunnel FET

  • Author

    Vadizadeh, Mahdi ; Fathipour, Morteza

  • Author_Institution
    Dept of Electr. & Comput. Eng., Univ. of Tehran, Tehran
  • fYear
    2009
  • fDate
    18-20 March 2009
  • Firstpage
    301
  • Lastpage
    304
  • Abstract
    In order to enhance Ion/Ioff ratio in the double gate tunneling field effect transistor (DG-TFET), employing a double gate structure has been investigated. Furthermore by employing a low-k oxide for the gate near the drain side (Gate2) fringing field effects are suppressed. Hence, the leakage current is decreased. Also a work function engineering method has been employed for the gate near the source (Gate1) to further reduce the off state current.
  • Keywords
    field effect transistors; leakage currents; tunnel transistors; work function; DG-TFET; double gate structure; double gate tunnel FET; drain side fringing field effects; field effect transistor; leakage current reduction; low-k oxide transistor; work function engineering method; CMOS technology; Double-gate FETs; Electrons; High K dielectric materials; High-K gate dielectrics; Leakage current; MOSFET circuits; P-i-n diodes; Tunneling; Voltage; band to band tunneling; high-k oxide; low-k oxide; work function engineering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
  • Conference_Location
    Aachen
  • Print_ISBN
    978-1-4244-3704-7
  • Type

    conf

  • DOI
    10.1109/ULIS.2009.4897595
  • Filename
    4897595
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3293195