Title :
A novel structure for improvment the Ion/Ioff ratio in nano-scale double gate source-heterojunction-MOS-transistor
Author :
Tahermaram, Mahsa ; Vadizadeh, Mahdi ; Fathipour, Morteza
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Tehran, Tehran
Abstract :
In this paper, we introduce a novel double gate SHOT which provides at least the drain current twice higher than that of the conventional SHOT structure. Improved characteristics are originated from the high velocity electron injection at the source edge due to the band offset energy. The analysis of the off-state current characteristics shows that provided 89% reduction in off-stat current. Based on this analysis, we proposed use of work function engineering as well as extra grounded gate to minimize the magnitude of GIDL current which is the main component of the off-state current.
Keywords :
CMOS integrated circuits; MOSFET; charge injection; leakage currents; optimisation; work function; GIDL current suppression; band offset energy; drain current; electron injection; gate-induced drain leakage current; grounded gate; leakage current reduction; nanoscale double gate SHOT; off-state current analysis; optimization; source-heterojunction-MOS-transistor; work function engineering; Electric variables; Electrons; Germanium silicon alloys; Grounding; Heterojunctions; Leakage current; Optimization methods; Power engineering and energy; Silicon germanium; Tunneling; GIDL; SHOT; band offset energy; band to band generation; heterojunction; off-state current;
Conference_Titel :
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
Conference_Location :
Aachen
Print_ISBN :
978-1-4244-3704-7
DOI :
10.1109/ULIS.2009.4897596
