A novel structure for improvment the Ion/Ioff ratio in nano-scale double gate source-heterojunction-MOS-transistor

Author

Tahermaram, Mahsa ; Vadizadeh, Mahdi ; Fathipour, Morteza

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Tehran, Tehran

fYear

2009

fDate

18-20 March 2009

Firstpage

305

Lastpage

308

Abstract

In this paper, we introduce a novel double gate SHOT which provides at least the drain current twice higher than that of the conventional SHOT structure. Improved characteristics are originated from the high velocity electron injection at the source edge due to the band offset energy. The analysis of the off-state current characteristics shows that provided 89% reduction in off-stat current. Based on this analysis, we proposed use of work function engineering as well as extra grounded gate to minimize the magnitude of GIDL current which is the main component of the off-state current.

Keywords

CMOS integrated circuits; MOSFET; charge injection; leakage currents; optimisation; work function; GIDL current suppression; band offset energy; drain current; electron injection; gate-induced drain leakage current; grounded gate; leakage current reduction; nanoscale double gate SHOT; off-state current analysis; optimization; source-heterojunction-MOS-transistor; work function engineering; Electric variables; Electrons; Germanium silicon alloys; Grounding; Heterojunctions; Leakage current; Optimization methods; Power engineering and energy; Silicon germanium; Tunneling; GIDL; SHOT; band offset energy; band to band generation; heterojunction; off-state current;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on

Conference_Location

Aachen

Print_ISBN

978-1-4244-3704-7

Type

conf

DOI

10.1109/ULIS.2009.4897596

Filename

4897596