Analytical modeling of Negative Bias Temperature Instability in triple gate MOSFETs

Author

Ghobadi, Nayereh ; Afzali-Kusha, Ali ; Asl-Soleimani, Ebrahim

Author_Institution

Sch. of Electr. & Comput. Eng., Univ. of Tehran, Tehran

fYear

2009

fDate

18-20 March 2009

Firstpage

309

Lastpage

312

Abstract

In this paper, an analytical model for negative bias temperature instability (NBTI) induced degradation in a triple gate MOSFET is presented. The model is obtained by solving the reaction-diffusion equations multi-dimensionally. The formulation considers the molecular diffusion of hydrogen in the oxide. The geometry dependence of the time exponent of NBTI degradation in triple gate MOSFETs are modeled in the framework. The accuracy of the model is verified using experimental results.

Keywords

MOSFET; reaction-diffusion systems; semiconductor device models; thermal stability; NBTI degradation; hydrogen molecular diffusion; negative bias temperature instability; reaction-diffusion equation; triple gate MOSFET; Analytical models; Degradation; Equations; Geometry; Hydrogen; MOSFETs; Negative bias temperature instability; Niobium compounds; Solid modeling; Titanium compounds; Analytical Modeling; Negative Bias Temperature Instability; Reaction—Diffusion (R-D) model; Triple Gate MOSFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on

Conference_Location

Aachen

Print_ISBN

978-1-4244-3704-7

Type

conf

DOI

10.1109/ULIS.2009.4897597

Filename

4897597