Title :
Analytical modeling of Negative Bias Temperature Instability in triple gate MOSFETs
Author :
Ghobadi, Nayereh ; Afzali-Kusha, Ali ; Asl-Soleimani, Ebrahim
Author_Institution :
Sch. of Electr. & Comput. Eng., Univ. of Tehran, Tehran
Abstract :
In this paper, an analytical model for negative bias temperature instability (NBTI) induced degradation in a triple gate MOSFET is presented. The model is obtained by solving the reaction-diffusion equations multi-dimensionally. The formulation considers the molecular diffusion of hydrogen in the oxide. The geometry dependence of the time exponent of NBTI degradation in triple gate MOSFETs are modeled in the framework. The accuracy of the model is verified using experimental results.
Keywords :
MOSFET; reaction-diffusion systems; semiconductor device models; thermal stability; NBTI degradation; hydrogen molecular diffusion; negative bias temperature instability; reaction-diffusion equation; triple gate MOSFET; Analytical models; Degradation; Equations; Geometry; Hydrogen; MOSFETs; Negative bias temperature instability; Niobium compounds; Solid modeling; Titanium compounds; Analytical Modeling; Negative Bias Temperature Instability; Reaction—Diffusion (R-D) model; Triple Gate MOSFETs;
Conference_Titel :
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
Conference_Location :
Aachen
Print_ISBN :
978-1-4244-3704-7
DOI :
10.1109/ULIS.2009.4897597
