Title :
Fabrication of gated polycrystalline silicon field emitters
Author :
Huq, S.E. ; Huang, M. ; Wilshaw, P.R. ; Prewett, P.D.
Author_Institution :
Central Microstructure Fac., Rutherford Appleton Lab., Chilton, UK
Abstract :
Polycrystalline silicon is currently being investigated as the cathode material for flat panel displays using field emission. Conventional silicon microfabrication techniques have been adapted to produce highly uniform arrays of gridded polysilicon field emitters
Keywords :
cathodes; electron field emission; elemental semiconductors; flat panel displays; silicon; vacuum microelectronics; Si; cathode material; field emission; flat panel displays; gridded polysilicon field emitters; microfabrication techniques; uniform arrays; vacuum microelectronics; Chemicals; Coatings; Crystalline materials; Etching; Fabrication; Lithography; Plasma applications; Plasma chemistry; Resists; Silicon;
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
DOI :
10.1109/IVMC.1996.601843
