Stable, low power and high performance SRAM based on CNFET

In this paper we investigate the electrical characteristics of carbon nanotube field effect transistor (CNFET) SRAMs. This analysis shows that in 32 nm technology node CNFET SRAM spends much less standby power and is more stable in read operation as compared with its Si-MOSFET SRAM counterpart. However, write static noise margin (SNM) in CNFET SRAM is very low so two SRAM designs based on backgate voltage and diameters of CNFET have been proposed to improve write SNM in CNFET SRAMs. This investigation shows that access time for a 128 column-256 row SRAM array based on CNFET is improved over its Si-Ccounterpart.