Title :
A novel high-density low-cost diode programmable read only memory
Author :
de Graaf, C. ; Woerlee, P.H. ; Hart, C.M. ; Lifka, H. ; De Vreede, P.W.H. ; Janssen, P.J.M. ; Sluijs, F.J. ; Paulzen, G.M.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
A new stand-alone diode programmable read only memory (DPROM) technology for one-time-programmable memories is presented. The technology features small cell size and low mask count. The memory function is based on the formation of a diode-antifuse by gate oxide breakdown. The functionality of DPROM circuits is demonstrated and the program, read and reliability characteristics are discussed.
Keywords :
PROM; cellular arrays; integrated circuit reliability; integrated memory circuits; masks; DPROM; cell size; diode programmable read only memory; diode-antifuse; gate oxide breakdown; mask count; memory function; one-time-programmable memories; reliability characteristics; Consumer electronics; Diodes; EPROM; Electric breakdown; Laboratories; Memory; PROM; Solid state circuits; Virtual reality; Voltage;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553151
