Title :
Fabrication of gated silicon spike emitter structures using micromachining mold technology
Author :
Fleming, J.G. ; King, Donald B. ; Barren, C.C.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
In order to reduce capacitance between emitter and gate electrodes, it is desirable to maximize the thickness of the oxide separating the electrodes. Parts with large (15 μ) emitter-to-gate electrode spacing have been fabricated using mold micromachining processes. The gates are self aligned to the emitter tip using CMP. The process results in planar features which are potentially compatible with CMOS processing
Keywords :
capacitance; elemental semiconductors; micromachining; polishing; silicon; vacuum microelectronics; 15 micron; CMOS processing; CMP; Si; capacitance; emitter-to-gate electrode spacing; field emitter arrays; gated spike emitter structures; micromachining mold technology; planar features; self alignment; CMOS process; Capacitance; Electrodes; Fabrication; Laboratories; Micromachining; Oxidation; Radio frequency; Silicon compounds; Sputter etching;
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
DOI :
10.1109/IVMC.1996.601844
