• DocumentCode
    3293268
  • Title

    Effect of multiple via structure on upstream electromigration in copper interconnect

  • Author

    Lin, Mingte ; Jou, Nick ; Liang, James W. ; Juan, Alex ; Su, K.C.

  • Author_Institution
    United Microelectron. Corp., Hsinchu, Taiwan
  • fYear
    2009
  • fDate
    6-10 July 2009
  • Firstpage
    603
  • Lastpage
    607
  • Abstract
    Upstream electromigration (EM) was studied on different multiple via structures. Better EM performance of structure with more via was observed. Via layout affects the current density distribution and resistance change under EM stress. Failure analysis showed different EM failure modes in these structures. EM performances were demonstrated to be dependent on current density and Cu diffusion pattern.
  • Keywords
    copper; electromigration; failure analysis; integrated circuit interconnections; EM stress; copper interconnect; current density distribution; failure analysis; layout affects; resistance change; upstream electromigration; Copper; Current density; Electromigration; Electrons; Equations; Failure analysis; Integrated circuit interconnections; Stress; Temperature; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
  • Conference_Location
    Suzhou, Jiangsu
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4244-3911-9
  • Electronic_ISBN
    1946-1542
  • Type

    conf

  • DOI
    10.1109/IPFA.2009.5232574
  • Filename
    5232574
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3293268