Title :
A compact physical model for subthreshold current in nanoscale FD/SOI MOSFETs
Author :
Moradinasab, Mahdi ; Ebrahimi, Behzad ; Fathipour, Morteza
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Tehran, Tehran
Abstract :
This paper presents a compact physical model for current-voltage characteristics of ultra-thin body (UTB) fully depleted (FD) silicon-on-insulator (SOI) MOSFETs in subthreshold region which accounts for quantum confinement effects (QCEs) as well as short channel effects (SCEs). Body region is modeled as an infinite potential well and carrier concentration is calculated accordingly. The model could be used for device and circuit applications such as yield estimation and static power approximation. Accuracy of the model was verified by simulation analysis in which coupled Poisson and Schrodinger equations were solved. Our analytical results show good agreement with simulation.
Keywords :
MOSFET; Poisson equation; Schrodinger equation; carrier density; elemental semiconductors; semiconductor device models; silicon; silicon-on-insulator; Poisson equations; Schrodinger equations; Si; carrier concentration; compact physical model; current-voltage characteristics; infinite potential well; nanoscale fully depleted SOI MOSFET; quantum confinement effects; short channel effects; silicon-on-insulator; Analytical models; Body regions; Circuit simulation; Coupled mode analysis; Current-voltage characteristics; MOSFETs; Potential well; Silicon on insulator technology; Subthreshold current; Yield estimation; quantum effects; silicon-on-insulator (SOI); subthreshold current; ultra thin body (UTB);
Conference_Titel :
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
Conference_Location :
Aachen
Print_ISBN :
978-1-4244-3704-7
DOI :
10.1109/ULIS.2009.4897600
