Emission characteristics of silicon field emitter arrays fabricated by spin-on-glass etch-back process

Author

Lee, Jin Ho ; Kang, Sung Weon ; Yu, Byoung Gon ; Cho, Kyoung Ik ; Yoo, Hyung Joun

Author_Institution

Semicond. Div., Electron. & Telecommun. Res. Inst., Taejon, South Korea

fYear

1996

fDate

7-12 Jul 1996

Firstpage

380

Lastpage

383

Abstract

The fabrication process and emission characteristics of silicon field emitter arrays (FEAs) for flat panel display are described. FEAs have been fabricated by a novel method which consists of two-step tip etch and spin-on-glass (SOG) etch-back processes using double layered thermal/tetraethylorthosilicate (TEOS) oxides as a gate dielectric. A small gate aperture with low gate leakage current could be fabricated with the process. The anode emission current measured from the 1024 tips array was about 300 μA (292 nA/tip) at a gate voltage of 70 V and the turn-on voltage was 49 V

Keywords

electron field emission; elemental semiconductors; etching; flat panel displays; leakage currents; silicon; vacuum microelectronics; 300 muA; 49 V; 70 V; Si; anode emission current; double layered thermal/tetraethylorthosilicate oxides; emission characteristics; fabrication process; field emitter arrays; flat panel display; gate aperture; gate dielectric; gate voltage; leakage current; spin-on-glass etch-back process; turn-on voltage; two-step tip etch; Anodes; Apertures; Dielectrics; Etching; Fabrication; Field emitter arrays; Flat panel displays; Leakage current; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601846

Filename

601846