Title :
Infrared characteristics of ni-doped ZnO thin films
Author :
Jiang, Jinghua ; He, Dawei ; Wang, Yongsheng ; Fu, Ming ; Feng, Bin ; Changbin Ju ; Du, Yufan
Author_Institution :
Key Lab. of Luminscence & Opt. Inf., Beijing Jiaotong Univ., Beijing, China
Abstract :
Ni-doped ZnO(ZnO:Ni)thin film had been studied widely as a ferromagnetic semiconductor, but there are far fewer studies on its infrared characteristics. This paper describes experiments in which Ni-doped ZnO thin films were deposited on quartz glass using a sol-gel process with different sintering temperatures. The infrared characteristics and the effects of the different fabrication processes were investigated using various techniques including X-ray diffraction (XRD), SEM and FT-IR.
Keywords :
Fourier transform spectra; II-VI semiconductors; X-ray diffraction; ferromagnetic materials; infrared spectra; magnetic thin films; nickel; scanning electron microscopy; semiconductor thin films; semimagnetic semiconductors; sintering; sol-gel processing; wide band gap semiconductors; zinc compounds; FT-IR spectra; SEM; SiO2; X-ray diffraction; XRD; ZnO:Ni; ferromagnetic semiconductor; quartz glass; sintering; sol-gel process; thin films; Fabrication; Glass; Semiconductor films; Semiconductor thin films; Sputtering; Temperature; Transistors; X-ray diffraction; X-ray scattering; Zinc oxide;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232578
