DocumentCode :
3293367
Title :
Fabrication technology of high frequency and high power durable surface acoustic wave devices for mobile radio communications
Author :
Yamada, Jun
Author_Institution :
Semicond. & Integrated Circuits Div., Hitachi Ltd., Tokyo, Japan
fYear :
1996
fDate :
7-12 Jul 1996
Firstpage :
393
Lastpage :
397
Abstract :
Addition of Ti, Ge and Zn to sputtered Al electrodes is investigated to obtain both high power durability and fine dimension control in high frequency surface acoustic wave (SAW) devices. Ti is more effective than Ce, Zn and conventional Cu. Improvement of electrode durability to SAW power is related to the grain refinement and static stress incorporated by addition of Ti, Ce, Cu and by the sputter deposition. In Ti added Al, dry etching (reactive ion etching: RIE) with BCl containing gases can be more easily performed than Cu added ones. By using the RIE and dyed W posi-type resist, line-width deviation (3σ) of 1.2 μm electrodes can be decreased to the small value of 95 nm, a value which is 40% of that in conventional wet etched ones
Keywords :
electrodes; mobile radio; sputter deposition; sputter etching; surface acoustic wave devices; 1.2 micron; Al; Ge; RIE; Ti; Zn; dimension control; dry etching; electrode durability; grain refinement; line-width deviation; mobile radio communications; posi-type resist; power durability; sputter deposition; static stress; surface acoustic wave devices; Acoustic waves; Dry etching; Electrodes; Fabrication; Frequency; Sputtering; Stress; Surface acoustic wave devices; Surface acoustic waves; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
Type :
conf
DOI :
10.1109/IVMC.1996.601849
Filename :
601849
Link To Document :
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