DocumentCode
3293388
Title
The Future of CD Metrology
Author
Allgair, John ; Bunday, Benjamin
Author_Institution
ISMI, Austin
fYear
2006
fDate
25-27 Sept. 2006
Firstpage
91
Lastpage
94
Abstract
State-of-the-art critical dimension (CD) metrology tools have had difficulty keeping pace with the extremely stringent lithography and etch CD measurement requirements in cutting-edge device fabrication facilities. These tight CD control requirements for 90 nm technology and below have been set forth in the 2005 International Technology Roadmap for Semiconductors (ITRS). This paper will provide a comprehensive review of the CD metrology challenges for photolithography, taking into account the areas addressed in the 2005 ITRS for the 45 nm technology generation and beyond.
Keywords
photolithography; proximity effect (lithography); cutting-edge device fabrication; etch critical dimension measurement; metrology tool; photolithography; wavelength 45 nm; Councils; Etching; Fabrication; Laboratories; Length measurement; Lithography; Manufacturing; Metrology; NIST; Random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2006. ISSM 2006. IEEE International Symposium on
Conference_Location
Tokyo
ISSN
1523-553X
Print_ISBN
978-4-9904138-0-4
Type
conf
DOI
10.1109/ISSM.2006.4493031
Filename
4493031
Link To Document