Title :
High quality silicon-nitride thin films grown by helium plasma-enhanced chemical vapor deposition
Author :
Lim, S. ; Kim, S.J. ; Jung, J.H. ; Ju, B.-K. ; Oh, M.H. ; Wager, J.F.
Author_Institution :
Dept. of Electron. Eng., Dankook Univ., Choongnam, South Korea
Abstract :
Silicon nitride (SiN) films with very high dielectric strength of more than 8 MV/cm were successfully deposited on Si wafers using helium plasma-enhanced chemical vapor deposition (He-PECVD) at very low deposition temperature. The quality of the SiN films was much better than that of the SiN films deposited by the conventional PECVD. Silicon oxynitride (SiON) films with index of refraction varying from 1.46 to 2.0 were also deposited on Corning-7059 glass substrate by controlling the gas flow rate using computer process controller
Keywords :
dielectric thin films; electric strength; helium; optical films; plasma CVD; plasma CVD coatings; refractive index; silicon compounds; Corning-7059 glass substrate; He; He PECVD; Si; Si wafers; SiN-Si; SiON; SiON films; anti-reflection coatings; chemical vapor deposition; computer process controller; dielectric strength; field emitter devices; gas flow rate control; high quality SiN thin films; low deposition temperature; plasma-enhanced CVD; Chemical vapor deposition; Dielectric breakdown; Dielectric thin films; Helium; Optical films; Plasma chemistry; Plasma temperature; Semiconductor films; Semiconductor thin films; Silicon compounds;
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
DOI :
10.1109/IVMC.1996.601852
