DocumentCode :
3293449
Title :
Device-level APC in Ion Implantation for Analog Device
Author :
Kyuho, Takashi ; Tsukihara, Tetsuya ; Wang, Qianyi ; Yamaoka, Masahiro ; Motosue, Takafumi ; Kimura, Koji
Author_Institution :
Toshiba Corp., Kitakyushu
fYear :
2006
fDate :
25-27 Sept. 2006
Firstpage :
110
Lastpage :
113
Abstract :
With the aim of achieving high accuracy for analog devices, we developed an advanced process control (APC) system for poly silicon resistance control in implantation steps. The effect of this system has been successfully demonstrated in our mass production. Moreover LP-CVD equipment for poly silicon deposition was enhanced with EES. This can improve the equipment fault detection ability for stabilizing this APC system.
Keywords :
fault diagnosis; ion implantation; process control; advanced process control; analog device; device-level APC; equipment fault detection ability; ion implantation; mass production; polysilicon resistance control; Bonding; Contact resistance; Control systems; Grain boundaries; Grain size; Ion implantation; Resistors; Semiconductor films; Silicon; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing, 2006. ISSM 2006. IEEE International Symposium on
Conference_Location :
Tokyo
ISSN :
1523-553X
Print_ISBN :
978-4-9904138-0-4
Type :
conf
DOI :
10.1109/ISSM.2006.4493036
Filename :
4493036
Link To Document :
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