Study of low-kv cleaning method to improve TEM samples prepared by FIB

With the shrinking of the device dimension into nanometer scale, focused ion beam has been the main methods to prepare TEM sample. The drawback to FIB sample preparation is surface damage and implantation, which produces noticeable effects when using techniques such as high-resolution "lattice imaging" TEM or electron energy loss spectroscopy. This damaged layer can be minimized by FIB milling with lower voltages. Low energy FIB is thus studied in this work, and some practical guidelines are derived for the real life applications.