Anodic bonding technique under low-temperature and low-voltage using evaporated glass

Author

Choi, Woo-Beom ; Ju, Byeong-Kwon ; Jeong, Seong-jae ; Lee, Nam-Yang ; Koh, Ken-Ha ; Haskard, M.R. ; Sung, Man-Young ; Oh, Myung-Hwan

Author_Institution

Div. of Electron. & Inf., Korea Inst. of Sci. & Technol., Seoul, South Korea

fYear

1996

fDate

7-12 Jul 1996

Firstpage

427

Lastpage

430

Abstract

We have performed silicon-to-silicon anodic bonding using a glass layer deposited by electron beam evaporation. Wafers can be bonded at 135°C with an applied voltage of 35 V_DC, which enables application of this technique to the vacuum packaging of microelectronic devices, because its bonding temperature and voltage are low. From the experimental results, we have found that an evaporated glass layer more than 1 μm thick was suitable for anodic bonding. We have also investigated the possibility of an evaporated glass layer as an insulating layer as well as a bonding layer

Keywords

electron beam deposition; elemental semiconductors; glass; integrated circuit packaging; microassembling; micromachining; silicon; wafer bonding; 1 micron; 135 C; 35 V; Si; Si-to-Si bonding; anodic bonding technique; bonding layer; electron beam evaporation; evaporated glass layer; insulating layer; low-temperature process; low-voltage process; microelectronic devices; vacuum packaging; Diffusion bonding; Electron beams; Electrostatics; Glass; Microelectronics; Packaging; Silicon; Temperature; Voltage; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601857

Filename

601857