DC bias effect on the synthesis of (001) textured diamond films on silicon

Author

Lee, J.S. ; Liu, K.S. ; Lin, I-Nan

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

1996

fDate

7-12 Jul 1996

Firstpage

441

Lastpage

445

Abstract

A diamond film consisting of almost 100% [001] grains can be synthesized at a fast rate (~3 μm/h) by a two-step process. First, the nuclei are formed under -160 VDC bias with 3 mol% CH₄/H ₂ at 900°C substrate temperature and then the films are grown under -100 VDC bias with around 5-6 mol% CH₄/H₂ at the same temperature. The nucleation of the diamond is enhanced by using bias voltage. The a- and b-axes of [001] textured diamond films grown under large bias voltage are aligned with a- and b-axes of silicon, viz. (100)_dia||(100)_Si and [110]_dia||[110]_Si. The effect of bias voltage on the growth behavior of the diamond films is accounted for by the suppression of the growth of the non-[001] grains due to the electron emission under bias

Keywords

X-ray diffraction; diamond; electron emission; elemental semiconductors; grain growth; nucleation; plasma CVD; plasma CVD coatings; scanning electron microscopy; semiconductor growth; semiconductor thin films; silicon; substrates; surface texture; (001) textured diamond films; -100 V; -160 V; 900 C; C-Si; CH₄/H₂ mixture; DC bias effect; Si; Si substrate; [001] grains; electron emission; growth behavior; two-step process; Hydrogen; Materials science and technology; Morphology; Optical films; Plasma chemistry; Plasma temperature; Semiconductor films; Silicon; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601860

Filename

601860