Title :
Novel Deep SAC Etch Process Technology for Advanced FCRAM
Author :
Yang, Daisy ; Kim, Helios ; Ji, Johnny ; Mieno, Fumitake
Author_Institution :
SMIC, Shanghai
Abstract :
As scaling-down of COB type FCRAMtrade (Fast Cycle RAM) approaches 0.1 um, storage node self-aligned contact (SAC") presents the most critical problem for the integration. Small process window is one of the major problems for a deep SAC etch. By using CxFy based chemistry, a deep SAC etch process with higher SIN selectivity and wider etch stop window were achieved. This is quite beneficial for higher performance of advanced FCRAMtrade.
Keywords :
electrical contacts; random-access storage; CxFy based chemistry; advanced FCRAM; deep SAC etch process technology; etch stop window; fast cycle RAM; self-aligned contact; Capacitors; Chemical technology; Chemistry; Etching; Filling; Parasitic capacitance; Pipelines; Random access memory; Silicon compounds; Space technology;
Conference_Titel :
Semiconductor Manufacturing, 2006. ISSM 2006. IEEE International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
978-4-9904138-0-4
DOI :
10.1109/ISSM.2006.4493045
