Atomically sharp features grown by silicon molecular beam epitaxy

Author

Hobart, K.D. ; Twigg, M.E. ; Gray, H.F. ; Shaw, J.L. ; Thompson, P.E. ; Kub, F.J. ; Park, D.

Author_Institution

Naval Res. Lab., Washington, DC, USA

fYear

1996

fDate

7-12 Jul 1996

Firstpage

463

Lastpage

467

Abstract

We report the first observation of atomically sharp Si tips grown by molecular beam epitaxy. The tips were grown on prepatterned substrates containing ~100 nm diameter high-aspect ratio Si pillars. Under proper growth conditions, self-organized faceting occurs and a combination of {111} and {113} planes forms a well defined apex. High resolution transmission electron microscopy has revealed that the apex is a few lattice spacings across. The evolution of the faceted nanostructures was quantified by depositing Ge marker layers during the growth process

Keywords

electron field emission; elemental semiconductors; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; silicon; transmission electron microscopy; vacuum microelectronics; 100 nm; Si; aspect ratio; atomically sharp features; lattice spacings; marker layers; molecular beam epitaxy; prepatterned substrates; self-organized faceting; transmission electron microscopy; Atomic beams; Atomic layer deposition; Epitaxial growth; Lattices; Molecular beam epitaxial growth; Nanostructures; Scanning electron microscopy; Silicon; Substrates; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601865

Filename

601865