DocumentCode
3293624
Title
Impact on Latchup Immunity due to the Switch From Epitaxial to Bulk Substrate
Author
Gene, Len Foo Eu ; Lee, Neoh Chia ; Tong, Tan Kok ; Sim, Derek
Author_Institution
Syst. on Silicon Manuf. Co. Pte. Ltd., Singapore
fYear
2006
fDate
25-27 Sept. 2006
Firstpage
156
Lastpage
159
Abstract
A comparison of the guardring efficiency is done between the epitaxial silicon and bulk silicon for sub-quarter micron technology. The dose optimization and use of ultra high-energy boron buried implanted layer (HBIL) after both pad oxidation and sacrificial oxidation process stage to enhance the guardring efficiency performance of bulk wafers are also investigated. The results and mechanisms leading to such phenomena are discussed.
Keywords
boron; epitaxial layers; ion implantation; optimisation; oxidation; silicon; substrates; B; Si; bulk silicon; bulk substrate; dose optimization; epitaxial silicon; latchup immunity; pad oxidation; sacrificial oxidation; sub-quarter micron technology; ultra high-energy boron buried implanted layer; Atomic layer deposition; Boron; CMOS technology; Implants; Oxidation; Silicon; Substrates; Switches; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2006. ISSM 2006. IEEE International Symposium on
Conference_Location
Tokyo
ISSN
1523-553X
Print_ISBN
978-4-9904138-0-4
Type
conf
DOI
10.1109/ISSM.2006.4493048
Filename
4493048
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