DocumentCode :
3293647
Title :
Field evaporation of tungsten silicides microprotrusions
Author :
Loginov, M.V. ; Shrednik, V.N.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fYear :
1996
fDate :
7-12 Jul 1996
Firstpage :
473
Lastpage :
476
Abstract :
The chemical composition of thermo-field microprotrusions, growing on the central top {110}-plane of W-tip, coated with some monoatomic layers of Si, has been studied by time of flight atom probe. It has been shown that the upper monoatomic layer of the protrusion is formed by WSi 2, and the bulk composition corresponds to WSi3
Keywords :
electron field emission; field evaporation; surface topography; tungsten compounds; vacuum microelectronics; Si monoatomic layers; W; WSi2; WSi3; central top {110}-plane; chemical composition; field evaporation; thermo-field microprotrusions; time of flight atom probe; Atomic layer deposition; Atomic measurements; Chemicals; Ion sources; Probes; Resistance heating; Silicides; Switches; Temperature; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
Type :
conf
DOI :
10.1109/IVMC.1996.601867
Filename :
601867
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3293647
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